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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Grade | Technology | Power Dissipation (Max) | Mounting Type | FET Type | Qualification | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 20 V | 60 V | 2.7 V | 101 pF | SC-59 SOT-23-3 TO-236-3 | 800 mA | TO-236AB | Automotive | MOSFET (Metal Oxide) | 323 mW 554 mW | Surface Mount | N-Channel | AEC-Q101 | 380 mOhm | -55 °C | 150 °C | 4.5 V 10 V | 3.6 nC |