Discrete Semiconductor Products

SQJB02ELP-T1_GE3

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MOSFET 2N-CH 40V 30A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 30A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJB02ELP-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	27 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Qualification	Package / Case	Vgs(th) (Max) @ Id [Max]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Grade	Configuration	Technology	Supplier Device Package
Vishay General Semiconductor - Diodes Division SQJB02ELP-T1_GE3	1700 pF	Surface Mount	32 nC	30 A	7.5 mOhm	AEC-Q101	PowerPAK® SO-8 Dual	2.2 V	27 W	-55 °C	175 ░C	40 V	Automotive	2 N-Channel (Dual)	MOSFET (Metal Oxide)	PowerPAK® SO-8 Dual

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General part information

Mosfet Array 40V 30A (Tc) 27W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources