SQJB02 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 40V 30A PPAK SO8
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Qualification | Package / Case | Vgs(th) (Max) @ Id [Max] | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Grade | Configuration | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1700 pF | Surface Mount | 32 nC | 30 A | 7.5 mOhm | AEC-Q101 | PowerPAK® SO-8 Dual | 2.2 V | 27 W | -55 °C | 175 ░C | 40 V | Automotive | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | PowerPAK® SO-8 Dual |