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STWA48N60M2
Discrete Semiconductor Products

STWA48N60M2

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STMicroelectronics

N-CHANNEL 600 V, 60 MOHM TYP., 42 A MDMESH M2 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

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STWA48N60M2
Discrete Semiconductor Products

STWA48N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 60 MOHM TYP., 42 A MDMESH M2 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTWA48N60M2
Current - Continuous Drain (Id) @ 25°C42 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3060 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)300 W
Rds On (Max) @ Id, Vgs70 mOhm
Supplier Device PackageTO-247 Long Leads
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 3.52

Description

General part information

STWA48N60M2 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources