Discrete Semiconductor Products

STP40NF20

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STMicroelectronics

POWER MOSFET, N CHANNEL, 200 V, 20 A, 0.038 OHM, TO-220, THROUGH HOLE

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DocumentsProduct Change Notice EN DS5083 +13

Discrete Semiconductor Products

STP40NF20

Active

STMicroelectronics

POWER MOSFET, N CHANNEL, 200 V, 20 A, 0.038 OHM, TO-220, THROUGH HOLE

Deep-Dive with AI

DocumentsProduct Change Notice EN DS5083 +13

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP40NF20

Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STP40NF20 Series

N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247

Part	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)
STMicroelectronics STP40NF20	TO-220-3	150 °C	-55 °C	75 nC	MOSFET (Metal Oxide)	2500 pF	45 mOhm	20 V	TO-220	4 V	N-Channel	10 V	Through Hole	200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	619	$ 4.18
Newark	Each	1	$ 3.59
		10	$ 2.59
		25	$ 2.31
		50	$ 2.16
		100	$ 2.00
		250	$ 1.84
		500	$ 1.78

Description

General part information

STP40NF20 Series

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.