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SOT-363
Discrete Semiconductor Products

SBC847BPDW1T1G

Active
ON Semiconductor

100 MA 45 V, CO-PACKAGED NPN AND PNP BIPOLAR JUNCTION TRANSISTOR

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SOT-363
Discrete Semiconductor Products

SBC847BPDW1T1G

Active
ON Semiconductor

100 MA 45 V, CO-PACKAGED NPN AND PNP BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSBC847BPDW1T1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition100 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]380 mW
QualificationAEC-Q101
Supplier Device PackageSC70-6, SC-88, SOT-363
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.27
10$ 0.16
100$ 0.10
500$ 0.07
1000$ 0.07
Digi-Reel® 1$ 0.27
10$ 0.16
100$ 0.10
500$ 0.07
1000$ 0.07
Tape & Reel (TR) 3000$ 0.05
6000$ 0.05
9000$ 0.05
15000$ 0.04
21000$ 0.04
30000$ 0.04
75000$ 0.04
150000$ 0.03
300000$ 0.03
NewarkEach (Supplied on Full Reel) 30000$ 0.03
ON SemiconductorN/A 1$ 0.03

Description

General part information

BC847CDW1 Series

The 100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.