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ONSEMI MBT3904DW1T1H
Discrete Semiconductor Products

BC847BPDW1T2G

Active
ON Semiconductor

100 MA 45 V, CO-PACKAGED NPN AND PNP BIPOLAR JUNCTION TRANSISTOR

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ONSEMI MBT3904DW1T1H
Discrete Semiconductor Products

BC847BPDW1T2G

Active
ON Semiconductor

100 MA 45 V, CO-PACKAGED NPN AND PNP BIPOLAR JUNCTION TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationBC847BPDW1T2G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]380 mW
Supplier Device PackageSC70-6, SC-88, SOT-363
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic650 mV, 600 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.20
10$ 0.12
100$ 0.07
500$ 0.05
1000$ 0.05
Digi-Reel® 1$ 0.20
10$ 0.12
100$ 0.07
500$ 0.05
1000$ 0.05
Tape & Reel (TR) 3000$ 0.04
6000$ 0.04
9000$ 0.03
15000$ 0.03
21000$ 0.03
30000$ 0.03
75000$ 0.02
150000$ 0.02
300000$ 0.02
NewarkEach (Supplied on Full Reel) 3000$ 0.05
6000$ 0.05
12000$ 0.04
18000$ 0.04
ON SemiconductorN/A 1$ 0.02

Description

General part information

BC847CDXV6 Series

The 100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.