Discrete Semiconductor Products

FDMS3660AS

Obsolete

ON Semiconductor

ASYMMETRIC DUAL N-CHANNEL POWERTRENCH® POWER STAGE MOSFET 30V

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Discrete Semiconductor Products

FDMS3660AS

Obsolete

ON Semiconductor

ASYMMETRIC DUAL N-CHANNEL POWERTRENCH® POWER STAGE MOSFET 30V

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMS3660AS

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	13 A, 30 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	30 nC
Input Capacitance (Ciss) (Max) @ Vds	2230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	Power56
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.7 V

FDMS3660AS Series

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	FET Feature	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Drain to Source Voltage (Vdss)	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FDMS3660AS	2.7 V	Power56	Logic Level Gate	13 A 30 A	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount	30 nC	2 N-Channel (Dual)	30 V	1 W	2230 pF	-55 °C	150 °C	8 mOhm
ON Semiconductor FDMS3660S-F121	2.7 V	Power56	Logic Level Gate	13 A 30 A	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount		2 N-Channel (Dual) Asymmetrical	30 V	1 W				8 mOhm	29 nC	1765 pF
ON Semiconductor FDMS3660S	2.7 V	Power56	Logic Level Gate	30 A 60 A	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount		2 N-Channel (Dual) Asymmetrical	30 V	1 W		-55 °C	150 °C	8 mOhm	29 nC	1765 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMS3660AS Series

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.

Documents

Technical documentation and resources