2N2369AUB
UnknownSMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
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Search across all available documentation for this part.
2N2369AUB
UnknownSMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N2369AUB |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 400 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 360 mW |
| Supplier Device Package | UB |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 450 mV |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 18.30 | |
| Newark | Each | 100 | $ 16.99 | |
| 500 | $ 16.34 | |||
Description
General part information
2N2369AUB-Transistor Series
This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Documents
Technical documentation and resources