STPSC8TH13TI
ActiveSILICON CARBIDE SCHOTTKY DIODE, DUAL SERIES, 650 V, 8 A, 23.5 NC, TO-220AB
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STPSC8TH13TI
ActiveSILICON CARBIDE SCHOTTKY DIODE, DUAL SERIES, 650 V, 8 A, 23.5 NC, TO-220AB
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Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC8TH13TI |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 8 A |
| Current - Reverse Leakage @ Vr | 80 µA |
| Diode Configuration | 1 Pair Series Connection |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-220AB Insulated |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V |
Pricing
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Description
General part information
STPSC8TH13TI Series
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Documents
Technical documentation and resources