Discrete Semiconductor Products
SCT3060ALGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 39 A, 650 V, 0.06 OHM, TO-247N
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Discrete Semiconductor Products
SCT3060ALGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 39 A, 650 V, 0.06 OHM, TO-247N
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3060ALGC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 39 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 58 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 165 W |
| Rds On (Max) @ Id, Vgs | 78 mOhm |
| Supplier Device Package | TO-247N |
Pricing
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Description
General part information
SCT3060AL Series
SCT3060AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources