Discrete Semiconductor Products

NTLUS4930NTBG

Active

SINGLE N-CHANNEL ΜCOOL™ POWER MOSFET 30V 6.1A 28.5MΩ

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

SINGLE N-CHANNEL ΜCOOL™ POWER MOSFET 30V 6.1A 28.5MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NTLUS4930NTBG

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.7 nC
Input Capacitance (Ciss) (Max) @ Vds	476 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	650 mW
Rds On (Max) @ Id, Vgs	28.5 mOhm
Supplier Device Package	6-UDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Single N-Channel µCool™ Power MOSFET 30V 6.1A 28.5mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
ON Semiconductor NTLUS4930NTBG	3.8 A	476 pF	650 mW	MOSFET (Metal Oxide)	28.5 mOhm	Surface Mount	20 V	N-Channel	4.5 V 10 V	2.2 V	-55 °C	150 °C	6-UDFN Exposed Pad	30 V	8.7 nC	6-UDFN (2x2)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET30 V, 6.1 A, Single N−Channel,2.0x2.0x0.55 mm µCool™ UDFN6 Package

Technical documentation and resources