SCTW60N120G2
LTBSILICON CARBIDE POWER MOSFET 1200 V, 35 MOHM TYP., 60 A IN AN HIP247 PACKAGE
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SCTW60N120G2
LTBSILICON CARBIDE POWER MOSFET 1200 V, 35 MOHM TYP., 60 A IN AN HIP247 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCTW60N120G2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1969 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 389 W |
| Rds On (Max) @ Id, Vgs | 52 mOhm |
| Supplier Device Package | HiP247™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 18 V, -5 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 459 | $ 18.53 | |
Description
General part information
SCTW60N120G2 Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Documents
Technical documentation and resources