2N3440E3
ActiveTRANSISTOR GP BJT NPN 250V 1A 3-PIN TO-39 BAG
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2N3440E3
ActiveTRANSISTOR GP BJT NPN 250V 1A 3-PIN TO-39 BAG
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3440E3 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 800 mW |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 20.45 | |
| Microchip Direct | N/A | 1 | $ 22.02 | |
| Newark | Each | 100 | $ 20.45 | |
| 500 | $ 19.66 | |||
Description
General part information
2N3440E3-Transistor-RoHS Series
This specification covers the performance requirements for NPN, silicon, low-power, high voltage 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3439UB, 2N3440, 2N3440L, 2N3440UA, 2N3440U4 and 2N3440UB transistors (E3 suffix for RoHS). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device types as specified in MIL-PRF-19500/368 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Documents
Technical documentation and resources