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TO-236AB
Discrete Semiconductor Products

PMV37EN2R

Active
Freescale Semiconductor - NXP

POWER MOSFET, N CHANNEL, 30 V, 4.5 A, 0.031 OHM, TO-236AB, SURFACE MOUNT

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TO-236AB
Discrete Semiconductor Products

PMV37EN2R

Active
Freescale Semiconductor - NXP

POWER MOSFET, N CHANNEL, 30 V, 4.5 A, 0.031 OHM, TO-236AB, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV37EN2R
Current - Continuous Drain (Id) @ 25°C4.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]209 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)5 W
Power Dissipation (Max)510 mW
Rds On (Max) @ Id, Vgs [Max]36 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.41
10$ 0.29
100$ 0.15
500$ 0.13
1000$ 0.10
Digi-Reel® 1$ 0.41
10$ 0.29
100$ 0.15
500$ 0.13
1000$ 0.10
Tape & Reel (TR) 3000$ 0.09
6000$ 0.09
9000$ 0.08
30000$ 0.08
75000$ 0.07
150000$ 0.06

Description

General part information

PMV37EN2 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.