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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Package / Case | Technology | Rds On (Max) @ Id, Vgs [Max] | FET Type | Supplier Device Package | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 20 V | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 36 mOhm | N-Channel | TO-236AB | Surface Mount | 209 pF | -55 °C | 150 °C | 4.5 V 10 V | 2 V | 5 W | 510 mW | 6.3 nC | 30 V | 4.5 A |