Specification	FDMS7556S

Current - Continuous Drain (Id) @ 25°C	49 A, 35 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	133 nC
Input Capacitance (Ciss) (Max) @ Vds	8965 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 96 W
Rds On (Max) @ Id, Vgs	1.2 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS7556S Series

N-Channel PowerTrench® SyncFET™ 25V, 130A, 1.2mΩ

Part	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDMS7556S	MOSFET (Metal Oxide)	25 V	8-PQFN (5x6)	4.5 V 10 V	N-Channel	Surface Mount	2.5 W 96 W	1.2 mOhm	133 nC	3 V	8-PowerTDFN	20 V	8965 pF	35 A 49 A	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Digi-Reel®	1	$ 2.68

Description

General part information

FDMS7556S Series

The FDMS7556S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.