FDMS7556S Series

N-Channel PowerTrench® SyncFET™ 25V, 130A, 1.2mΩ

Catalog

N-Channel PowerTrench® SyncFET™ 25V, 130A, 1.2mΩ

Part	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDMS7556S	MOSFET (Metal Oxide)	25 V	8-PQFN (5x6)	4.5 V 10 V	N-Channel	Surface Mount	2.5 W 96 W	1.2 mOhm	133 nC	3 V	8-PowerTDFN	20 V	8965 pF	35 A 49 A	-55 °C	150 °C

Catalog

N-Channel PowerTrench® SyncFET™ 25V, 130A, 1.2mΩ

Key Features

• Max rDS(on)= 1.2 mΩ at VGS= 10 V, ID= 35 A

• Max rDS(on)= 1.65 mΩ at VGS= 4.5 V, ID= 31 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• SyncFET Schottky Body Diode

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

The FDMS7556S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.