Specification	NTD2955G

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	55 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTD2955 Series

Single P-Channel Power MOSFET -60V, -12A, 180mΩ

Part	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTD2955G	55 W	Surface Mount	750 pF	60 V	30 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	10 V	20 V	DPAK	MOSFET (Metal Oxide)	180 mOhm	4 V	-55 °C	175 ░C	12 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTD2955 Series

This Power MOSFET is designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.