NTD2955 Series

Single P-Channel Power MOSFET -60V, -12A, 180mΩ

Catalog

Single P-Channel Power MOSFET -60V, -12A, 180mΩ

Part	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTD2955G	55 W	Surface Mount	750 pF	60 V	30 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	10 V	20 V	DPAK	MOSFET (Metal Oxide)	180 mOhm	4 V	-55 °C	175 ░C	12 A

Catalog

Single P-Channel Power MOSFET -60V, -12A, 180mΩ

Key Features

• Avalanche Energy Specified

• IDSSand VDS(on)Specified at Elevated Temperature

• Designed for Low Voltage, High Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes

• RoHS Compliant

Description

This Power MOSFET is designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.