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FDS86242
Discrete Semiconductor Products

FDS2672

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 200 V, 3.9 A, 0.059 OHM, SOIC, SURFACE MOUNT

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FDS86242
Discrete Semiconductor Products

FDS2672

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 200 V, 3.9 A, 0.059 OHM, SOIC, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS2672
Current - Continuous Drain (Id) @ 25°C3.9 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
Input Capacitance (Ciss) (Max) @ Vds2535 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.5 W
Rds On (Max) @ Id, Vgs70 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.62
10$ 1.69
100$ 1.16
500$ 0.93
1000$ 0.86
Digi-Reel® 1$ 2.62
10$ 1.69
100$ 1.16
500$ 0.93
1000$ 0.86
Tape & Reel (TR) 2500$ 0.79
NewarkEach (Supplied on Cut Tape) 1$ 2.66
10$ 2.16
25$ 2.00
50$ 1.82
100$ 1.65
ON SemiconductorN/A 1$ 0.84

Description

General part information

FDS2672 Series

This single N-Channel MOSFET is produced using an advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.