FDS2672 Series

N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

Catalog

N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

Part	Technology	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDS2672	MOSFET (Metal Oxide)	8-SOIC	20 V	70 mOhm	2.5 W	8-SOIC	3.9 mm	0.154 in	46 nC	-55 °C	150 °C	200 V	Surface Mount	6 V 10 V	N-Channel	3.9 A	4 V	2535 pF

Catalog

N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

Key Features

• Max rDS(on)= 70mΩ at VGS= 10V, ID= 3.9A

• Max rDS(on)= 80mΩ at VGS= 6V, ID= 3.5A

• Fast switching speed

• High performance trench technology for extremely low rDS(on)

• RoHS compliant

Description

This single N-Channel MOSFET is produced using an advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.