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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STB20N95K5

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STMicroelectronics

N-CHANNEL 950 V, 0.275 OHM TYP., 17.5 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STB20N95K5

Active
STMicroelectronics

N-CHANNEL 950 V, 0.275 OHM TYP., 17.5 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB20N95K5
Current - Continuous Drain (Id) @ 25°C17.5 A
Drain to Source Voltage (Vdss)950 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds1500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)250 W
Rds On (Max) @ Id, Vgs330 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.62
10$ 6.53
100$ 5.44
500$ 4.80
Digi-Reel® 1$ 7.62
10$ 6.53
100$ 5.44
500$ 4.80
N/A 1247$ 8.06
Tape & Reel (TR) 1000$ 4.32
2000$ 4.05

Description

General part information

STB20 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.