CSD18541F5T
Active60-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1.5 MM X 0.8MM, 65 MOHM, GATE ESD PROTECTION
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CSD18541F5T
Active60-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1.5 MM X 0.8MM, 65 MOHM, GATE ESD PROTECTION
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD18541F5T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.2 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 777 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-SMD, No Lead |
| Power Dissipation (Max) [Max] | 500 mW |
| Rds On (Max) @ Id, Vgs | 65 mOhm |
| Supplier Device Package | 3-PICOSTAR |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.92 | |
| 10 | $ 0.76 | |||
| 100 | $ 0.59 | |||
| Digi-Reel® | 1 | $ 0.92 | ||
| 10 | $ 0.76 | |||
| 100 | $ 0.59 | |||
| Tape & Reel (TR) | 250 | $ 0.58 | ||
| 500 | $ 0.50 | |||
| 1250 | $ 0.41 | |||
| 2500 | $ 0.38 | |||
| 6250 | $ 0.36 | |||
| 12500 | $ 0.35 | |||
| 25000 | $ 0.35 | |||
| Texas Instruments | SMALL T&R | 1 | $ 0.80 | |
| 100 | $ 0.54 | |||
| 250 | $ 0.42 | |||
| 1000 | $ 0.28 | |||
Description
General part information
CSD18541F5 Series
This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
Documents
Technical documentation and resources