Discrete Semiconductor Products
FDB86102LZ
ActiveON Semiconductor
TRANS MOSFET N-CH 100V 8.3A 3-PIN(2+TAB) D2PAK T/R
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Discrete Semiconductor Products
FDB86102LZ
ActiveON Semiconductor
TRANS MOSFET N-CH 100V 8.3A 3-PIN(2+TAB) D2PAK T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDB86102LZ |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 21 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1275 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 3.1 W |
| Rds On (Max) @ Id, Vgs | 24 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 345 | $ 0.87 | |
| 345 | $ 0.87 | |||
| Cut Tape (CT) | 1 | $ 2.54 | ||
| 1 | $ 2.54 | |||
| 10 | $ 1.64 | |||
| 10 | $ 1.64 | |||
| 100 | $ 1.12 | |||
| 100 | $ 1.12 | |||
| Digi-Reel® | 1 | $ 2.54 | ||
| 1 | $ 2.54 | |||
| 10 | $ 1.64 | |||
| 10 | $ 1.64 | |||
| 100 | $ 1.12 | |||
| 100 | $ 1.12 | |||
| Tape & Reel (TR) | 800 | $ 0.85 | ||
| 800 | $ 0.85 | |||
| 1600 | $ 0.79 | |||
| 1600 | $ 0.79 | |||
| 2400 | $ 0.76 | |||
| 2400 | $ 0.76 | |||
| 4000 | $ 0.75 | |||
| 4000 | $ 0.75 | |||
| Newark | Each (Supplied on Full Reel) | 1 | $ 1.02 | |
| 3000 | $ 0.95 | |||
| 6000 | $ 0.91 | |||
| 12000 | $ 0.81 | |||
| 18000 | $ 0.78 | |||
| 30000 | $ 0.75 | |||
| ON Semiconductor | N/A | 1 | $ 0.69 | |
Description
General part information
FDB86102LZ Series
This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Documents
Technical documentation and resources