FDB86102LZ Series

N-Channel PowerTrench® MOSFET, 100V, 30A, 24mΩ

Catalog

N-Channel PowerTrench® MOSFET, 100V, 30A, 24mΩ

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case
ON Semiconductor FDB86102LZ	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 V 10 V	20 V	3 V	Surface Mount	1275 pF	N-Channel	24 mOhm	TO-263 (D2PAK)	21 nC	100 V	3.1 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
ON Semiconductor FDB86102LZ	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 V 10 V	20 V	3 V	Surface Mount	1275 pF	N-Channel	24 mOhm	TO-263 (D2PAK)	21 nC	100 V	3.1 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Catalog

N-Channel PowerTrench® MOSFET, 100V, 30A, 24mΩ

Key Features

• Max rDS(on)= 24 mΩ at VGS= 10 V, ID= 8.3 A

• Max rDS(on) = 35 mΩ at VGS= 4.5 V, ID= 6.8 A

• HBM ESD protection level > 6 kV typical (Note 4)

• Very low Qg and Qgd compared to competing trench technologies

• Fast switching speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.