FGA25N120FTD

Obsolete

ON Semiconductor

IGBT 1200V 50A 313W TO3P

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Discrete Semiconductor Products

FGA25N120FTD

Obsolete

ON Semiconductor

IGBT 1200V 50A 313W TO3P

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FGA25N120FTD

Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	75 A
Gate Charge	160 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	313 W
Reverse Recovery Time (trr)	770 ns
Supplier Device Package	TO-3P
Switching Energy	340 µJ, 900 µJ
Test Condition	15 V, 600 V, 15 Ohm, 25 A
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

FGA25N120ANTDTU Series

IGBT, 1200V, 25A, NPT Trench

Part	IGBT Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Test Condition	Current - Collector Pulsed (Icm)	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Mounting Type	Reverse Recovery Time (trr)	Switching Energy	Current - Collector (Ic) (Max)	Td (on/off) @ 25°C
ON Semiconductor FGA25N120ANTU	NPT	SC-65-3 TO-3P-3	-55 °C	150 °C	1200 V	200 nC	310 W	40 A	60 ns 170 ns	10 Ohm 15 V 25 A 600 V	75 A	TO-3P	3.2 V	Through Hole
ON Semiconductor FGA25N120FTD	Trench Field Stop	SC-65-3 TO-3P-3	-55 °C	150 °C	1200 V	160 nC	313 W			15 V 15 Ohm 25 A 600 V	75 A	TO-3P	2 V	Through Hole	770 ns	340 µJ 900 µJ	50 A
ON Semiconductor FGA25N120ANTDTU-F109	NPT and Trench	SC-65-3 TO-3P-3	-55 °C	150 °C	1200 V	200 nC	312 W			10 Ohm 15 V 25 A 600 V	90 A	TO-3P	2.65 V	Through Hole	350 ns	4.1 mJ 960 µJ	50 A	50 ns 190 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGA25N120ANTDTU Series

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven

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Technical documentation and resources