
FGA25N120ANTDTU-F109
ActiveTRANS IGBT CHIP N-CH 1200V 50A 312W 3-PIN(3+TAB) TO-3P TUBE
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FGA25N120ANTDTU-F109
ActiveTRANS IGBT CHIP N-CH 1200V 50A 312W 3-PIN(3+TAB) TO-3P TUBE
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Technical Specifications
Parameters and characteristics for this part
| Specification | FGA25N120ANTDTU-F109 |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Gate Charge | 200 nC |
| IGBT Type | NPT and Trench |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 312 W |
| Reverse Recovery Time (trr) | 350 ns |
| Supplier Device Package | TO-3P |
| Switching Energy | 960 µJ, 4.1 mJ |
| Td (on/off) @ 25°C | 190 ns, 50 ns |
| Test Condition | 15 V, 10 Ohm, 25 A, 600 V |
| Vce(on) (Max) @ Vge, Ic | 2.65 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 450 | $ 2.34 | |
| ON Semiconductor | N/A | 1 | $ 1.93 | |
Description
General part information
FGA25N120ANTDTU Series
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven
Documents
Technical documentation and resources