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onsemi-FGA25N120ANTDTU-F109 IGBT Chip Trans IGBT Chip N-CH 1200V 50A 312W 3-Pin(3+Tab) TO-3P Tube
Discrete Semiconductor Products

FGA25N120ANTDTU-F109

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ON Semiconductor

TRANS IGBT CHIP N-CH 1200V 50A 312W 3-PIN(3+TAB) TO-3P TUBE

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onsemi-FGA25N120ANTDTU-F109 IGBT Chip Trans IGBT Chip N-CH 1200V 50A 312W 3-Pin(3+Tab) TO-3P Tube
Discrete Semiconductor Products

FGA25N120ANTDTU-F109

Active
ON Semiconductor

TRANS IGBT CHIP N-CH 1200V 50A 312W 3-PIN(3+TAB) TO-3P TUBE

Technical Specifications

Parameters and characteristics for this part

SpecificationFGA25N120ANTDTU-F109
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)90 A
Gate Charge200 nC
IGBT TypeNPT and Trench
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-65-3, TO-3P-3
Power - Max [Max]312 W
Reverse Recovery Time (trr)350 ns
Supplier Device PackageTO-3P
Switching Energy960 µJ, 4.1 mJ
Td (on/off) @ 25°C190 ns, 50 ns
Test Condition15 V, 10 Ohm, 25 A, 600 V
Vce(on) (Max) @ Vge, Ic2.65 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 450$ 2.34
ON SemiconductorN/A 1$ 1.93

Description

General part information

FGA25N120ANTDTU Series

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven