Discrete Semiconductor Products

STU8N65M5

Obsolete

MOSFET N-CH 650V 7A IPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 7A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU8N65M5

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	690 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Operating Temperature	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Power Dissipation (Max) [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Supplier Device Package
STMicroelectronics STU8N65M5	10 V	N-Channel	MOSFET (Metal Oxide)	150 °C	5 V	650 V	7 A	690 pF	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	70 W	25 V	15 nC	600 mOhm	IPAK	TO-251

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.95

General part information

N-Channel 650 V 7A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources