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Discrete Semiconductor Products

JAN1N4150UR-1

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Microchip Technology

DIODE GEN PURP 50V 200MA DO213AA

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Discrete Semiconductor Products

JAN1N4150UR-1

Active
Microchip Technology

DIODE GEN PURP 50V 200MA DO213AA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN1N4150UR-1
Current - Average Rectified (Io)200 mA
Current - Reverse Leakage @ Vr100 nA
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-213AA
QualificationMIL-PRF-19500/231
Reverse Recovery Time (trr)4 ns
SpeedAny Speed
Speed200 mA
Supplier Device PackageDO-213AA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]50 V
Voltage - Forward (Vf) (Max) @ If1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 516$ 1.33

Description

General part information

JANTXV1N4150-1-Switching-Diode Series

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Documents

Technical documentation and resources