Discrete Semiconductor Products

FDMD8280

Obsolete

ON Semiconductor

MOSFET 2N-CH 80V 11A 12POWER

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Search across all available documentation for this part.

Discrete Semiconductor Products

FDMD8280

Obsolete

ON Semiconductor

MOSFET 2N-CH 80V 11A 12POWER

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMD8280

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	80 V
Gate Charge (Qg) (Max) @ Vgs	44 nC
Input Capacitance (Ciss) (Max) @ Vds	3050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	8.2 mOhm
Supplier Device Package	12-Power3.3x5
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

FDMD82100L Series

Dual N-Channel PowerTrench<sup>®</sup> MOSFET 100V, 24A, 19.5mΩ

Part	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	FET Feature
ON Semiconductor FDMD8280	Surface Mount	2 N-Channel (Dual)	11 A	-55 °C	150 °C	12-Power3.3x5	44 nC	1 W	3050 pF	80 V	MOSFET (Metal Oxide)	4 V	8.2 mOhm
ON Semiconductor FDMD82100	Surface Mount	2 N-Channel (Dual)	7 A	-55 °C	150 °C	12-Power3.3x5	17 nC	1 W		100 V	MOSFET (Metal Oxide)	4 V	19 mOhm	1070 pF
ON Semiconductor FDMD82100L	Surface Mount	2 N-Channel (Dual)	7 A	-55 °C	150 °C	12-Power3.3x5	24 nC	1 W	1585 pF	100 V	MOSFET (Metal Oxide)	3 V			19.5 mOhm	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMD82100L Series

This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/ QgFOM silicon.

Documents

Technical documentation and resources

No documents available