FDMD82100L Series

Dual N-Channel PowerTrench® MOSFET 100V, 24A, 19.5mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET 100V, 24A, 19.5mΩ

Part	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	FET Feature
ON Semiconductor FDMD8280	Surface Mount	2 N-Channel (Dual)	11 A	-55 °C	150 °C	12-Power3.3x5	44 nC	1 W	3050 pF	80 V	MOSFET (Metal Oxide)	4 V	8.2 mOhm
ON Semiconductor FDMD82100	Surface Mount	2 N-Channel (Dual)	7 A	-55 °C	150 °C	12-Power3.3x5	17 nC	1 W		100 V	MOSFET (Metal Oxide)	4 V	19 mOhm	1070 pF
ON Semiconductor FDMD82100L	Surface Mount	2 N-Channel (Dual)	7 A	-55 °C	150 °C	12-Power3.3x5	24 nC	1 W	1585 pF	100 V	MOSFET (Metal Oxide)	3 V			19.5 mOhm	Logic Level Gate

Catalog

Dual N-Channel PowerTrench® MOSFET 100V, 24A, 19.5mΩ

Key Features

• Max rDS(on)= 19.5 mΩ at VGS= 10 V, ID= 7 A

• Max rDS(on)= 30 mΩ at VGS= 4.5 V, ID= 5.7 A

• Ideal for flexible layout in primary side of bridge topology

• Termination is Lead-free and RoHS Compliant

• 100% UIL tested

• Kelvin High Side MOSFET drive pin-out capability

Description

This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/ QgFOM silicon.