Discrete Semiconductor Products

NTLUS3192PZTAG

Obsolete

POWER MOSFET 20V 3.4A 85 MOHM SINGLE P-CHANNEL UDFN6 WITH ESD

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Discrete Semiconductor Products

Obsolete

POWER MOSFET 20V 3.4A 85 MOHM SINGLE P-CHANNEL UDFN6 WITH ESD

Technical Specifications

Parameters and characteristics for this part

Specification	NTLUS3192PZTAG

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerUFDFN
Power Dissipation (Max) [Max]	600 mW
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	6-UDFN (1.6x1.6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Power MOSFET 20V 3.4A 85 mOhm Single P-Channel UDFN6 with ESD

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
ON Semiconductor NTLUS3192PZTAG	450 pF	8.5 nC	-55 °C	150 °C	6-UDFN (1.6x1.6)	6-PowerUFDFN	P-Channel	20 V	MOSFET (Metal Oxide)	2.2 A	8 V	600 mW	Surface Mount	85 mOhm	1.5 V 4.5 V	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

POWER MOSFET, -20 V, -4.2 A, µCool™ Single P-Channel, ESD, 1.6 x 1.6 x 0.55 mm UDFN Package