Discrete Semiconductor Products
FGA60N65SMD
ActiveON Semiconductor
TRANS IGBT CHIP N-CH 650V 120A 3-PIN(3+TAB) TO-3P(N) RAIL
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Discrete Semiconductor Products
FGA60N65SMD
ActiveON Semiconductor
TRANS IGBT CHIP N-CH 650V 120A 3-PIN(3+TAB) TO-3P(N) RAIL
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FGA60N65SMD |
|---|---|
| Current - Collector (Ic) (Max) | 120 A |
| Current - Collector Pulsed (Icm) | 180 A |
| Gate Charge | 189 nC |
| IGBT Type | Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 600 W |
| Reverse Recovery Time (trr) | 47 ns |
| Supplier Device Package | TO-3P |
| Switching Energy | 1.54 mJ, 450 µJ |
| Td (on/off) @ 25°C | 104 ns, 18 ns |
| Test Condition | 15 V, 400 V, 3 Ohm, 60 A |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 6.58 | |
| 10 | $ 4.43 | |||
| 100 | $ 3.21 | |||
| 500 | $ 2.69 | |||
| 1000 | $ 2.62 | |||
| Newark | Each | 1 | $ 7.86 | |
| 10 | $ 7.66 | |||
| 25 | $ 6.56 | |||
| 50 | $ 5.44 | |||
| 100 | $ 5.12 | |||
| 250 | $ 4.80 | |||
| ON Semiconductor | N/A | 1 | $ 2.41 | |
Description
General part information
FGA60N65SMD Series
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Documents
Technical documentation and resources