FGA60N65SMD Series

IGBT, 650V, 60A, Field Stop

Catalog

IGBT, 650V, 60A, Field Stop

Part	Gate Charge	Current - Collector Pulsed (Icm)	Switching Energy	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Reverse Recovery Time (trr)	Mounting Type	Power - Max [Max]	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max)	IGBT Type
ON Semiconductor FGA60N65SMD	189 nC	180 A	1.54 mJ 450 µJ	3 Ohm 15 V 60 A 400 V	-55 °C	175 ░C	18 ns 104 ns	2.5 V	650 V	47 ns	Through Hole	600 W	TO-3P	SC-65-3 TO-3P-3	120 A	Field Stop

Catalog

IGBT, 650V, 60A, Field Stop

Key Features

• Maximum junction temperature : TJ=175 °C

• Positive temperature co-efficient for easy parallel operating

• High current capability

• Low saturation voltage: VCE(sat)=1.9V(Typ.) @ IC= 60A

• Fast switching: EOFF=7.5uJ/A

• Tightened parameter distribution

• RoHS compliant

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.