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8-Power TDFN

Discrete Semiconductor Products

CSD18531Q5AT

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Texas Instruments

60-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 4.6 MOHM

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Search across all available documentation for this part.

DocumentsTips for Successfully Paralleling Power MOSFETs Using MOSFET Safe Operating Area Curves in Your Design +10

8-Power TDFN

Discrete Semiconductor Products

CSD18531Q5AT

Active

Texas Instruments

60-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 4.6 MOHM

Deep-Dive with AI

DocumentsTips for Successfully Paralleling Power MOSFETs Using MOSFET Safe Operating Area Curves in Your Design +10

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CSD18531Q5AT

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	3840 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W, 156 W
Rds On (Max) @ Id, Vgs	4.6 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.97
		10	$ 1.64
		100	$ 1.30
	Digi-Reel®	1	$ 1.97
		10	$ 1.64
		100	$ 1.30
	Tape & Reel (TR)	250	$ 1.27
		500	$ 1.10
		1250	$ 0.94
		2500	$ 0.89
		6250	$ 0.86
Texas Instruments	SMALL T&R	1	$ 1.64
		100	$ 1.26
		250	$ 0.93
		1000	$ 0.66

Description

General part information

CSD18531Q5A Series

This 60-V, 3.5-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 60-V, 3.5-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Documents

Technical documentation and resources

Tips for Successfully Paralleling Power MOSFETs

Application brief

Using MOSFET Safe Operating Area Curves in Your Design

Application note

CSD18531Q5A 60-V N-Channel NexFET™ Power MOSFET datasheet (Rev. G)

How to select a MOSFET - Hot Swap

Technical article

Understanding MOSFET data sheets, Part 5 – Switching Parameters

Technical article

Ringing Reduction Techniques for NexFET High Performance MOSFETs

Application note

Avoid Common Mistakes When Selecting And Designing With Power MOSFETs

Application note

QFN and SON PCB Attachment (Rev. C)

Application note

MOSFET Support and Training Tools (Rev. F)

Application note

Using MOSFET Transient Thermal Impedance Curves In Your Design

Application note

Semiconductor and IC Package Thermal Metrics (Rev. D)

Application note

Power Management Guide 2018 (Rev. R)

Selection guide

CSD18531Q5A Series

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.6 mOhm

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
Texas Instruments CSD18531Q5AT	43 nC	3.1 W 156 W	100 A	4.5 V 10 V	8-PowerTDFN	8-VSONP (5x6)	20 V	N-Channel	2.3 V	MOSFET (Metal Oxide)	4.6 mOhm	3840 pF	60 V	-55 °C	150 °C	Surface Mount