CSD18531Q5A Series

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.6 mOhm

Catalog

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.6 mOhm

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
Texas Instruments CSD18531Q5AT	43 nC	3.1 W 156 W	100 A	4.5 V 10 V	8-PowerTDFN	8-VSONP (5x6)	20 V	N-Channel	2.3 V	MOSFET (Metal Oxide)	4.6 mOhm	3840 pF	60 V	-55 °C	150 °C	Surface Mount

Catalog

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.6 mOhm

Key Features

• Ultra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLogic LevelLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageUltra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLogic LevelLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 60-V, 3.5-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 60-V, 3.5-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.