Discrete Semiconductor Products

SI4410DY,518

Obsolete

MOSFET N-CH 30V 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4410DY,518

Current - Continuous Drain (Id) (Tj)	10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	34 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max)	13.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1 V

Part	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Vgs(th) (Max)	FET Type	Vgs (Max)	Package Length	Package Name	Package Width	Rds On (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tj)
NXP USA Inc. SI4800,518	9 A	11.8 nC	800 mV	N-Channel	20 V	0.154 in	8-SO 8-SOIC	3.9 mm	18.5 mOhm	30 V	Surface Mount	10 V	4.5 V	MOSFET (Metal Oxide)	2.5 W	-55 °C	150 °C
NXP USA Inc. SI4410DY,518		34 nC	1 V	N-Channel	20 V	0.154 in	8-SO 8-SOIC	3.9 mm	13.5 mOhm	30 V	Surface Mount	10 V	4.5 V	MOSFET (Metal Oxide)	2.5 W	-55 °C	150 °C	10 A
NXP USA Inc. SI4420DY,518		120 nC	1 V	N-Channel	20 V	0.154 in	8-SO 8-SOIC	3.9 mm	9 mOhm	30 V	Surface Mount	10 V	4.5 V	MOSFET (Metal Oxide)	2.5 W	-55 °C	150 °C	12.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 10A (Tj) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources