SI4 Series
Manufacturer: NXP USA Inc.
MOSFET N-CH 30V 9A 8SO
| Part | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Vgs(th) (Max) | FET Type | Vgs (Max) | Package Length | Package Name | Package Width | Rds On (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Technology | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tj) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP USA Inc. | 9 A | 11.8 nC | 800 mV | N-Channel | 20 V | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 18.5 mOhm | 30 V | Surface Mount | 10 V | 4.5 V | MOSFET (Metal Oxide) | 2.5 W | -55 °C | 150 °C | |
NXP USA Inc. | 34 nC | 1 V | N-Channel | 20 V | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 13.5 mOhm | 30 V | Surface Mount | 10 V | 4.5 V | MOSFET (Metal Oxide) | 2.5 W | -55 °C | 150 °C | 10 A | |
NXP USA Inc. | 120 nC | 1 V | N-Channel | 20 V | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 9 mOhm | 30 V | Surface Mount | 10 V | 4.5 V | MOSFET (Metal Oxide) | 2.5 W | -55 °C | 150 °C | 12.5 A |