Discrete Semiconductor Products

TP2522N8-G

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MOSFET, P-CHANNEL ENHANCEMENT-MODE, -220V, 12 OHM 3 SOT-89 T/R ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -220V, 12 OHM 3 SOT-89 T/R ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	TP2522N8-G

Current - Continuous Drain (Id) @ 25°C	260 mA
Drain to Source Voltage (Vdss)	220 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	125 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	TO-243AA (SOT-89)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Microchip Technology TP2522N8-G	20 V	2.4 V	Surface Mount	TO-243AA	P-Channel	MOSFET (Metal Oxide)	260 mA	12 Ohm	TO-243AA (SOT-89)	220 V	-55 °C	150 °C	4.5 V 10 V	125 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2000	$ 1.39
Newark	Each (Supplied on Full Reel)	100	$ 1.44

General part information

P-Channel 220 V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Technical documentation and resources