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5-DFN, 8-SO Flat Lead
Discrete Semiconductor Products

NVMFS4C306NT1G

Active
ON Semiconductor

POWER MOSFET 30V, 116A, 3.4 MΩ, SINGLE N-CHANNEL, SO8-FL, LOGIC LEVEL.

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5-DFN, 8-SO Flat Lead
Discrete Semiconductor Products

NVMFS4C306NT1G

Active
ON Semiconductor

POWER MOSFET 30V, 116A, 3.4 MΩ, SINGLE N-CHANNEL, SO8-FL, LOGIC LEVEL.

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFS4C306NT1G
Current - Continuous Drain (Id) @ 25°C20.6 A, 71 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1683 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN, 5 Leads
Power Dissipation (Max)36.5 W, 3 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs3.4 mOhm
Supplier Device Package5-DFN (5x6)
Supplier Device Package8-SOFL
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.33
10$ 1.50
100$ 1.02
500$ 0.82
Digi-Reel® 1$ 2.33
10$ 1.50
100$ 1.02
500$ 0.82
Tape & Reel (TR) 1500$ 0.72
3000$ 0.67
NewarkEach (Supplied on Full Reel) 1000$ 0.93
ON SemiconductorN/A 1$ 0.95

Description

General part information

NVMFS4C306N Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.