NVMFS4C306N Series

Power MOSFET 30V, 116A, 3.4 mΩ, Single N-Channel, SO8-FL, Logic Level.

Catalog

Power MOSFET 30V, 116A, 3.4 mΩ, Single N-Channel, SO8-FL, Logic Level.

Part	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NVMFS4C306NT1G	N-Channel	30 V	4.5 V 10 V	Surface Mount	20 V	8-PowerTDFN 5 Leads	MOSFET (Metal Oxide)	11.6 nC	3.4 mOhm	2.1 V	3 W 36.5 W	AEC-Q101	1683 pF	5-DFN (5x6)	8-SOFL	-55 °C	175 ░C	Automotive	20.6 A 71 A

Catalog

Power MOSFET 30V, 116A, 3.4 mΩ, Single N-Channel, SO8-FL, Logic Level.

Key Features

• Low RDS (on)Resistance

• Low Capacitance

• AEC-Q101 qualified

• Wettable flank (WF) option - NVMFS4C306NWF

• Low gate charge

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.