Discrete Semiconductor Products

STP30NM60N

Obsolete

MOSFET N-CH 600V 25A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 25A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP30NM60N

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	91 nC
Input Capacitance (Ciss) (Max) @ Vds	2700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STP30NM60N	130 mOhm	N-Channel	30 V	Through Hole	600 V	150 °C	190 W	10 V	TO-220-3	4 V	TO-220	25 A	91 nC	MOSFET (Metal Oxide)	2700 pF
STMicroelectronics STP30N20	75 mOhm	N-Channel		Through Hole	200 V		125 W		TO-220-3	4 V	TO-220	30 A		MOSFET (Metal Oxide)		38 nC	150 °C	-55 °C	1597 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 6.17

General part information

N-Channel 600 V 25A (Tc) 190W (Tc) Through Hole TO-220

Technical documentation and resources