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Discrete Semiconductor Products

CSD18509Q5B

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Texas Instruments

40-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 1.2 MOHM

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VSON-CLIP (DNK)
Discrete Semiconductor Products

CSD18509Q5B

Active
Texas Instruments

40-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 1.2 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD18509Q5B
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]195 nC
Input Capacitance (Ciss) (Max) @ Vds13900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)195 W, 3.1 W
Rds On (Max) @ Id, Vgs1.2 mOhm
Supplier Device Package8-VSON-CLIP (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.29
10$ 1.90
100$ 1.51
500$ 1.28
1000$ 1.09
Digi-Reel® 1$ 2.29
10$ 1.90
100$ 1.51
500$ 1.28
1000$ 1.09
Tape & Reel (TR) 2500$ 1.03
5000$ 0.99
Texas InstrumentsLARGE T&R 1$ 1.69
100$ 1.40
250$ 1.00
1000$ 0.76

Description

General part information

CSD18509Q5B Series

This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.