CSD18509Q5B Series

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.2 mOhm

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.2 mOhm

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id [Max]	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology
Texas Instruments CSD18509Q5B	-55 °C	150 °C	195 nC	100 A	20 V	N-Channel	40 V	8-PowerTDFN	2.2 V	Surface Mount	3.1 W 195 W	8-VSON-CLIP (5x6)	4.5 V 10 V	13900 pF	1.2 mOhm	MOSFET (Metal Oxide)

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.2 mOhm

Key Features

• Ultra-Low On ResistanceLow Thermal ResistanceAvalanche RatedLogic LevelPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageUltra-Low On ResistanceLow Thermal ResistanceAvalanche RatedLogic LevelPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.