Specification	NTHD4102PT3G

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.9 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	8.6 nC
Input Capacitance (Ciss) (Max) @ Vds	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

NTHD4102P Series

Dual P-Channel ChipFET™ Power MOSFET -20V -4.1A 80mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Feature	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Technology	Configuration
ON Semiconductor NTHD4102PT3G	8.6 nC	80 mOhm	Logic Level Gate	2.9 A	1.5 V	1.1 W	750 pF	20 V	-55 °C	150 °C	ChipFET™	Surface Mount	MOSFET (Metal Oxide)	2 P-Channel
ON Semiconductor NTHD4102PT1G	8.6 nC	80 mOhm	Logic Level Gate	2.9 A	1.5 V	1.1 W	750 pF	20 V	-55 °C	150 °C	ChipFET™	Surface Mount	MOSFET (Metal Oxide)	2 P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET -20 V, -4.1 A Dual P-Channel ChipFET™

Technical documentation and resources