NTHD4102P Series

Dual P-Channel ChipFET™ Power MOSFET -20V -4.1A 80mΩ

Catalog

Dual P-Channel ChipFET™ Power MOSFET -20V -4.1A 80mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Feature	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Technology	Configuration
ON Semiconductor NTHD4102PT3G	8.6 nC	80 mOhm	Logic Level Gate	2.9 A	1.5 V	1.1 W	750 pF	20 V	-55 °C	150 °C	ChipFET™	Surface Mount	MOSFET (Metal Oxide)	2 P-Channel
ON Semiconductor NTHD4102PT1G	8.6 nC	80 mOhm	Logic Level Gate	2.9 A	1.5 V	1.1 W	750 pF	20 V	-55 °C	150 °C	ChipFET™	Surface Mount	MOSFET (Metal Oxide)	2 P-Channel

Dual P-Channel ChipFET™ Power MOSFET -20V -4.1A 80mΩ

• Offers an Ultra Low RDS(ON)Solution in the ChipFET™ Package

• Miniature ChipFet Package 40% Smaller Footprint than TSOP-6

• Low Profile (<1.1mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics

• Simplifies Circuit Designs since Additional Boost Circuits for Gate Voltages are not Required

• Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology

Power MOSFET -20 V, -4.1 A Dual P-Channel ChipFET™