Discrete Semiconductor Products
R6030ENZ4C13
ActiveRohm Semiconductor
600V 30A TO-247, LOW-NOISE POWER MOSFET
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Discrete Semiconductor Products
R6030ENZ4C13
ActiveRohm Semiconductor
600V 30A TO-247, LOW-NOISE POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R6030ENZ4C13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 85 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 305 W |
| Rds On (Max) @ Id, Vgs | 130 mOhm |
| Supplier Device Package | TO-247 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6030ENZ4 Series
R6030ENZ4 is a power MOSFET for switching applications.
Documents
Technical documentation and resources