Catalog
600V 30A TO-247, Low-noise Power MOSFET
Description
AI
R6030ENZ4 is a power MOSFET for switching applications.
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600V 30A TO-247, Low-noise Power MOSFET
600V 30A TO-247, Low-noise Power MOSFET
| Part | Technology | Vgs (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | MOSFET (Metal Oxide) | 20 V | TO-247 | 600 V | 130 mOhm | TO-247-3 | 2100 pF | 30 A | 305 W | 10 V | Through Hole | 150 °C | 85 nC | N-Channel |