Discrete Semiconductor Products

SIA483DJ-T1-GE3

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MOSFET P-CH 30V 12A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 30V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA483DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIA483ADJ-T1-GE3	4.5 V 10 V	Surface Mount	PowerPAK® SC-70-6	30 V	2.5 V	P-Channel	10.6 A 12 A	16 V	-20 V	20 mOhm	3.4 W 17.9 W	-55 °C	150 °C	26 nC	PowerPAK® SC-70-6	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SIA483DJ-T1-GE3	4.5 V 10 V	Surface Mount	PowerPAK® SC-70-6	30 V		P-Channel	12 A			21 mOhm	3.5 W 19 W	-55 °C	150 °C	45 nC	PowerPAK® SC-70-6	MOSFET (Metal Oxide)	2.2 V	1550 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources